Abstract

The effect of ionizing radiations (Alpha, Beta, Gamma) in CdS/p-Si heterojunction solar cells are discussed in this paper. The short-circuit current density parameters before Gamma irradiation conditions have been improved up to 35 mA/cm2 and after Gamma irradiation was 30 mA/cm2. The open circuit voltage before Gamma irradiation was 0.59 and 0.565 V after Gamma irradiation. The limitations of these devices were discussed by investigating the dependence of electrical and efficiency parameters in function of radiation time. The efficiency of the cell before radiation was equal to (11.2%) whenever, after the impact of both Alpha, Beta, and Gamma was follows, 4.7, 4.9, and 5.1% respectively. The fill factor before and after Gamma irradiation was 54.5 and 53 %. Studying and analyzing the cells using the I-V, with the change of time rate of Gamma radiation played a critical role in reducing the efficiency of solar cells. The campaign was carried out with different doses of a series of solar cells by exposing them to different time. The deterioration parameters of CdS/p-Si solar cells by Gamma radiation led to strongly supports the results of minority carrier lifetime, which clearly showed diminishing minority carrier lifetime with increasing radiation dose.

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