A Stillinger-Weber Potential for InGaN


  •  X. W. Zhou    
  •  R. E. Jones    

Abstract

Reducing defects in InGaN films deposited on GaN substrates has been critical to fill the “green” gap for solid-state lighting applications. To enable researchers to use molecular dynamics vapor deposition simulations to explores ways to reduce defects in InGaN films, we have developed and characterized a Stillinger-Weber potential for InGaN. We show that this potential reproduces the experimental atomic volume, cohesive energy, and bulk modulus of the equilibrium wurtzite / zinc-blende phases of both InN and GaN. Most importantly, the potential captures the stability of the correct phase of InGaN compounds against a variety of other elemental, alloy, and compound configurations. This is validated by the potential’s ability to predict crystalline growth of stoichiometric wurtzite and zinc-blende InxGa1-xN compounds during vapor deposition simulations where adatoms are randomly injected to the growth surface.



This work is licensed under a Creative Commons Attribution 4.0 License.
  • ISSN(Print): 1927-0585
  • ISSN(Online): 1927-0593
  • Started: 2012
  • Frequency: quarterly

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