Abstract

Gamma-radiation is commonly used to study surface defects in MOS transistors. Early experiments show two stages of surface-defect formation in a MOS structure under low-intensity gamma irradiation (Popov & Vin, 2014; Popov, 2016). On the first stage the defect formation take place on interface Si-SiO₂ from the oxide side. This process is described by an exponential dependence (Rashkeev et al., 2002). In the second stage “additional” surface defects are formed from the Si side. Radiation defects of silicon migrated to interface Si-SiO₂ from the semiconductor.

The goal of this paper is investigation of surface-defect formation in a MOS transistor using the changing of surface electron mobility.

This work is licensed under a Creative Commons Attribution 4.0 License.