Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition


  •  Keiji Komatsu    
  •  Pineda Marulanda David Alonso    
  •  Nozomi Kobayashi    
  •  Ikumi Toda    
  •  Shigeo Ohshio    
  •  Hiroyuki Muramatsu    
  •  Hidetoshi Saitoh    

Abstract

MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.



This work is licensed under a Creative Commons Attribution 4.0 License.
  • ISSN(Print): 1927-0585
  • ISSN(Online): 1927-0593
  • Started: 2012
  • Frequency: quarterly

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