Abstract

Possibility of development of processes of selforganization in the semiconductors of type A^IIIB^V grown up by Chohralsky method in which there are no single vacancies because all of them are combined in complexes of type shallow donor + vacancy has been shown. At small homogeneous heating of such samples these complexes break up and periodic distribution of vacancies along the sample appearances. Thus, internal isotype potential barriers are formed. Because of division of created by action of temperature the non-equilibrium carriers by these barriers synergetic current and (or) voltage generate. These theoretical ideas are confirmed by experiments on gallium arsenide doped by tellurium and gallium arsenide doped by tin.

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