Abstract

In this article, we study the structure and optical performance of penetration dislocation to the epitaxial GaN-base quantum well on C-plane sapphire. On the one hand, the penetration dislocation will make the interface of quantum wells disperse and largely fluctuate, and accordingly increase the localization effect of quantum wells. On the other hand, as the nonradiative recombination center, the penetration dislocation makes the radiation intensity of quantum wells to be reduced. The influence of penetration dislocation to the optical performance of InGaN/GaN multiple quantum wells decides the competition between both. In addition, the localization effect intensity of InGaN quantum wells possesses linear relation with the content of In in definite range of wavelength.

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