Abstract

The analytical expressions for the densities of states for graphene formed on semiconducting substrates are obtained. The problem on the induced gap is studied thoroughly. It is shown, that graphene electronic spectrum according to the relation between the system’s parameters can contain two gaps or one gap, overlapping with the energy gap of substrate. The gaps width dependences on the coupling regimes (tight and weak) are obtained. Numerical estimations are fulfilled for the epitaxial graphene on 6H-SiC{0001}.

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