Abstract

Critical current density on the electromigration failure is a commonly observed phenomenon in the integrated circuit (IC) interconnect. The critical current density is important for the lognormal distribution and failure time extrapolation of IC metal conductors. In this paper, we report the critical current density (j_c) of semiconductor laser degradation for the first time. Despite of the different physical origin, the j_c of the laser degradation exhibits similar effect on the failure time distribution. We develop a new kinetic defect diffusion model that can account for the existence of j_c. We discuss the physical mechanism and its implication in the reliability extrapolation of diode lasers.

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