Abstract

In this study, the growth of three important semiconductor nanowires, Zinc Oxide, Indium Oxide and Cadmium Sulfide nanowires using the vapor–liquid–solid (VLS) method has been investigated. Different growth recipes with different growth parameters were incorporated to synthesize high quality and long NWs. It attempts to provide precise growth recipes which lead to high quality of nanowires. The effect of different growth conditions such as growth temperature, carrier gas flow, presence of metal catalyst and growth time has been investigated. Also, to evaluate the crystal quality of the nanowires, photoluminescence (PL) spectra of the as grown nanowires were investigated.

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