Abstract

The calculation model of tunneling current through GaN/InGaN/GaN heterostructure in InGaN-based LED using the transfer matrix method employed to verify the result of calculation of tunneling current implemented analytically. The analytical method applied through solving theoretically the Schrödinger equation, whereas, the  transfer matrix method divided the solution area into a less size of N segment compared to the observed potential width size, where the potential energy of each segment was assumed constant. Verification employed to the thickness of depletion region and bias voltage variations. The obtained result has shown that the analytical result of calculation simmilar with the calculation result using transfer matrix method. The calculation model was then extended to calculate the tunneling current for different temperature.

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