Abstract

Recently, nanometer size semiconductors have been a topic of great interest. Electrochemical and /or chemical etches of silicon produce P-Si layers have a strong link between the details of processing and the optical and electronic properties of the resulting structure. This paper focuses on investigation different affecting parameters on the surface morphology, etching rate, electrical properties. Good electrical properties (low resistivity and high passing current) achieved by electrochemical etching when appropriate etching current density and  short etching time of 10 min.

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