Microtesla Sensitivity and Noise of a Triple Collector Magnetotransistor

Amelichev V. V., Tikhonov R. D., Cheremisinov A. A.

Abstract


The sensitivity of a bipolar magnetotransistor with the base in a well has been studied in a microtesla magnetic field. The noise was experimentally measured to compare the performance of two designs of dual-collector lateral bipolar magnetotransistor, which are formed in a uniformly doped substrate or in a diffused well. The noise decreases in a diffused well. Acquiring an adequate understanding of the mechanism underlying the operation of the device should help to improve its magnetic sensitivity. A low velocity of surface recombination and an extraction of the injected electrons using a base–well ?-n junction determined the operating mode with the deviation of two charge carrier flows.


Full Text: PDF DOI: 10.5539/mas.v7n11p26

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Modern Applied Science   ISSN 1913-1844 (Print)   ISSN 1913-1852 (Online)

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