Multicomponent Solid Solutions (ZnSe)1-x-y(Si2)x(GaP)y

Saidov A. S., Usmonov Sn. N., Rakhmonov U. Kh, Kurmantayev A. N., Bahtybayev A. N.


Epitaxy layers of solid solution (ZnSe)1-x-y(Si2)x(GaP)y(0 £ ? £ 0.03, 0 £ y £ 0.09) were grown up from the limited volume of tin solution-melting by method of liquid phase epitaxy. Profiles of distribution of components Ga, P, Zn, Se and Si in grown up epitaxy layers are defined. In spectrum of the photoluminescence of surface of the solid solution at 5 K 2 peaks of radiation are found out. They are probably caused by compounds Si2 (1.67 eV) and GaP (2.21 eV). It has been shown that covalent coupling  Si-Si and Ga-P cause impurity levels laying in the forbidden zone of the solid solution (ZnSe)1-x-y(Si2)x(GaP)y. Isotype heterojunction n-GaP-n+-(ZnSe)1-x-y(Si2)x(GaP)y (0 £ ? £ 0.03, 0 £ y £ 0.09) (without luminophor) gives red and yellow luminescence which is caused by electronic transitions from Si-Si and from Ga-P, taking place in tetrahedron  lattice of the solid solution.

Full Text:



Journal of Materials Science Research   ISSN 1927-0585 (Print)   ISSN 1927-0593 (Online)

Copyright © Canadian Center of Science and Education

To make sure that you can receive messages from us, please add the '' domain to your e-mail 'safe list'. If you do not receive e-mail in your 'inbox', check your 'bulk mail' or 'junk mail' folders.


images_120. proquest_logo_120