The Planar Magneto-Transistor : Topology & Offset

We have studied the planar magneto-transistor and experimentally measured the offset to better understand the device. The geometry of the electrodes of a planar magneto-transistor is an essential factor for creating high-performance magneto-transistors. Acquiring an adequate understanding of the device’s underlying mechanisms should help to improve its offset.

"Typical offsets in the MTs chosen as reference are up to a few percent.The offsets vary between individual devices.This variation usually dominates the statistics.A strong local mismatch of the offset between neighboring devices is observed.In addition to this scale variation, variations on a larger scale also contribute to offset.Suppressed sidewall injection magneto-transistors (SSIMT) exibit a quadrupling of the offsets compared to standard MTs.This comes from misalignment of the emitter guard ring.By applying offset reduction approaches, average absolute values as low as 0.11 % are achieved, corresponding to magnetic field equivalent offset of 3.2 mT and 3.9 mT depending on the device.This is lower by a factor of approximately 100 than the worst case equivalent offsets observed in the SSIMTs integrated in the angle detection system".An epigraph is a philosophical phrase H. Weyl "...we had to understand that general organization of nature possesses that [left-right] symmetry.But one will not expect that any special object of nature shows it to perfection."Tikhonov, Kozlov and Polomoshnov (2008), Tikhonov (2009Tikhonov ( , 2010a) ) have demonstrated that transistor current is dependent on the value and sign of the imbalance between collector potentials.This effect is not explained by initial asymmetries.The cause of this initial imbalance remains a mystery in the literature.Mathematical modelling makes it possible to calculate the origin for a given skewness, but this modelling does not predict the potential imbalance.We turn to experimental methods to help determine the origin of this imbalance.
There are no known studies that explore the potential imbalance of planar magneto-transistors.Lateral magneto-transistors are sensitive to magnetic fields directed parallel to the surface of a crystal, while planar magneto-transistors are sensitive to magnetic fields directed to the orthogonal axis of a crystal.These field direction sensitivities are responsible for the different characteristics present in lateral and planar magneto-transistors.This paper presents the results of an experimental study of planar magneto-transistors obtained in a single technological cycle and on the same plates with lateral magneto-transistors.  T.

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www.ccsen  Magneto-transistor E also had a small offset and the signal in magnetic field was more than twice the signal observed in D. However, this device configuration had more than three-times the initial imbalance of the two collectors' potential.The heavily doped contact area located between the emitter and the collectors did not form a continuous ring and, as a result, there was an increased offset.
Magneto-transistor F had the smallest offset.The combination of the rhomboid emitter and a heavily doped contact proved to be optimal.
In planar magneto-transistors, the magnetic field is perpendicular to the surface of the crystal.Sensitivity is determined by the variation of the current collector in a plane parallel to the surface of the crystal and by changing the effective length of the base.

Conclusion
The increase of the initial imbalance of the two collectors' potential is apparently the result of the increased electric field at the corners of the collectors, as spontaneous discharge lightning rod.
The rhombic emitter eliminates competition between the injectors from the angles of the square emitter.
The heavily doped contact area to the base, located between the emitter and the collectors, does not provide leak currents across the surface of the injection.This absence of leak currents is reflected in the reduced imbalance.
The geometry of the magneto-transistors played a vital role; the rhomboidal emitter electrodes, the rectangular collectors and the solid frame of the heavily doped contact contributed to reduce the offset.
It can be concluded that the geometry of the electrodes of a planar magneto-transistor is an essential factor for creating high-performance magneto-transistors.Optimization of the topology will allow magneto-transistors to be used by integrated magnetic sensors.
A small Discovery-figuring the influence of electrode shape on initial voltage imbalance potential collectors of magneto-transistor-can give a broader way to use magneto-transistors.

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