Abstract

A highly sensitive (metal/nanostructure silicon /metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes,Of nanostructures porous silicon prepared by laser assisted etching .
 Photoresponse was investigated in the wavelength rang of (400-850nm) . A responsivity of (3A/w) was measured at (450 nm) with low value of dark current of about ( 1 µA /cm2 ) at 5 volt reverse bias.

This work is licensed under a Creative Commons Attribution 4.0 License.