Modern Applied Science
Design and Fabrication of Nanostructures Silicon Photodiode
Abstract
A highly sensitive (metal/nanostructure silicon /metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes,Of nanostructures porous silicon prepared by laser assisted etching .
Photoresponse was investigated in the wavelength rang of (400-850nm) . A responsivity of (3A/w) was measured at (450 nm) with low value of dark current of about ( 1 µA /cm2 ) at 5 volt reverse bias.
Photoresponse was investigated in the wavelength rang of (400-850nm) . A responsivity of (3A/w) was measured at (450 nm) with low value of dark current of about ( 1 µA /cm2 ) at 5 volt reverse bias.
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Modern Applied Science ISSN 1913-1844 (Print) ISSN 1913-1852 (Online)
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