Abstract

The effects of grow parameters such as barrier thickness, flow ratio of group-III sources (TMIn/(TMIn+TMGa)), well temperature on the properties of green  multiple quantum well (MQW) are investigated. The samples were grown by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HRXRD) and room temperature photoluminescence (PL) were employed to analyze the results. The PL and HRXRD images show that a green MQW of high quality, at long wavelength 550nm, was obtained by controlling the GaN buffer quality, well growth temperature, and flow ratio of group-III sources (TMIn/(TMIn+TMGa)).

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