Effects of Annealing Temperature on Raman Scattering and Electrical Properties of Te-Doped Nanostructured Black Silicon

Abstract

In this paper, the influence of annealing temperature on Raman scattering and transport properties of Te-doped nanostructured black silicon has been studied. We prepared the black silicon samples by wet etching, i.e. alkaline etching and metal assisted etching. The nanopores on the surface of black silicon were produced by metal assisted etching. The black silicon samples were annealed at different temperature of 600^oC, 700^oC, and 800^oC According to the Raman scattering results, the peak intensity of Si increases with the increase of annealing temperature. However, the full width at half maximum (FWHM) is inversely proportion to the annealing temperature. Thermal annealing removes the Raman peak of amorphous Si at 480 cm^-1. In term of Te dopant atoms, the peak intensities of annealed samples are much lower than that of unannealed one. Subsequent Hall Effect measurement shows that annealing treatment improves electronic transport properties of Te-doped nanostructured black silicon.