Defect Diffusion Model of InGaAs/InP Semiconductor Laser Degradation


  •  Jack Jia-Sheng Huang    
  •  Yu-Heng Jan    
  •  Dawei Ren    
  •  YiChing Hsu    
  •  Ping Sung    
  •  Emin Chou    

Abstract

To enable high-performance fiber to the x (FTTx) and datacenter networks, it is important to achieve reliable and stable optical components over time. Laser diode is the essential building block of the optical components. Degradation analysis is critical for overall successful reliability design. In this paper, we study the modelling and experimental data of the InGaAs/InP laser degradation. We present a defect diffusion model that involves three propagation media (p-InGaAs contact, p-InP cladding and multi-quantum wells). We propose a simple constitutive equation based on the Gauss error function to describe the defect propagation. The physical model assumes that the p-InGaAs is the rate-limiting factor for the defect diffusion process.



This work is licensed under a Creative Commons Attribution 4.0 License.
  • ISSN(Print): 1916-9639
  • ISSN(Online): 1916-9647
  • Started: 2009
  • Frequency: semiannual

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