Low Temperature Bonding of Metals by Deposition of Nanoparticles at the Interface

Toshio Takiya, Naoaki Fukuda, Ikurou Umezu, Akira Sugimura, Shigeo Ueguri, Hisao Yoshida, Min Han

Abstract


Copper nanopartices having some tens nanometer in diameter were prepared by pulsed laser ablation in a helium background gas to form active interface of copper-to-copper bonding. The nanoparticles deposited on Cu plate were annealed in hydrogen gas atmosphere. The sintering starts from below 473 K and boundary of nanoparticles was hardly observed above 673 K. Bonding of copper-to-copper metal pieces has been carried out by deposition of copper nanoparticles on the test piece as active interface followed by annealing at 673 K. The measured shear strength of the copper-to-copper bonding was 106 MPa, which is much higher value than that when solder was used as bonding material. The sintering process of Cu nanoparticles is discussed.


Full Text: PDF DOI: 10.5539/apr.v4n1p42

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Applied Physics Research   ISSN 1916-9639 (Print)   ISSN 1916-9647 (Online)

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